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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3688 DESCRIPTION With TO-3PN package High breakdown voltage High speed APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 1500 800 6 10 25 UNIT V V V A A W ae ae Open emitter Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature Open collector TC=25ae 150 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3688 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0A 800 V VCEsat Collector-emitter saturation voltage IC=8A ; IB=2.0A 5.0 V VBEsat Base-emitter saturation voltage IC=8A ; IB=2.0A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0V 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0A 1.0 mA hFE DC current gain IC=1A ; VCE=5V 8 Switching times ts tf Fall time Storage time CHA IN E SEM NG IC=6.0A IB1=1.2A;IB2=-2.4A VCC=200V OND IC TOR UC 3.0 |I 0.2 |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3688 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3688 CHA IN E SEM NG OND IC TOR UC 4 |
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